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Si4807DY
Vishay Siliconix
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
Gate 1 –30 30 Gate 2
rDS(ON) (W)
0.035 @ VGS = –10 V 0.054 @ VGS = –4.5 V 1.3 @ VGS = –10 V 2.2 @ VGS = –4.5 V
ID (A)
"6 "4.8 "0.9 "0.7 D
SO-8
G2 G1 S S 1 2 3 4 Top View S P-Channel MOSFET 8 7 6 5 NC D D D G2 G1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID "4.8 IDM IS PD TJ, Tstg "30 –1.25 2.3 W 1.0 –55 to 150 _C "0.7 "1.5 A
Symbol
VDS VGS
Gate 1
–30 "20 "6
Gate 2
Unit
V
"0.
SI4807DY Datasheet
