Si4810BDY
FEATURES
- -
- - Trench FET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested
Pb-free Available
Ro HS-
PLIANT
SCHOTTKY PRODUCT SUMMARY
VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8
APPLICATIONS
- DC-DC Logic Level
- Low Voltage and Battery Powered Applications
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free)
G N-Channel MOSFET S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky) a
Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS IF IFM...
