SI4810DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V
ID (A)
10 8
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V) Diode Forward Voltage
0.53 V @ 3.0 A
IF (A)
4.0 D D D D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810DY Si4810DY-T1 (with Tape and Reel) G N-Channel MOSFET S S S Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C VDS VGS...
