Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
Channel 1 Channel-1 30 Channel 2 Channel-2 r DS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0155 @ VGS = 10 V 0.0205 @ VGS = 4.5 V
ID (A)
6.3 5.4 9.5 8.2
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V) Diode Forward Voltage
0.50 V @ 1.0 A
IF (A)
D1
D2
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4818DY Si4818DY-T1 (with Tape and Reel) 8 7 6 5 D1 D2 D2 D2 S1 N-Channel 1 MOSFET S2 A Schottky Diode G1 G2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1 Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Channel-2 10 secs
30 20 V 9.5 7.6 40 7.0 5.6 A 1.15 1.25 0.80 W _C
Symbol
VDS VGS
10 secs
Steady State
Steady State
Unit
6.3 ID IDM IS...
