Si4800DY
Vishay Siliconix
N-Channel Reducded Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V
ID (A)
9 7
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4800DY Si4800DY-T1 (with Tape and Reel) 8 7 6 5 D D D D N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
30 "25 9 7 40 2.3 2.5 1.6
- 55 to 150
Unit
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a t v 10 sec Steady State Rth JA 70
Symbol
Typical
Maximum
Unit
_C/W
Notes a. Surface Mounted on FR4 Board. b. t v 10 sec....
