Si4802DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V
ID (A)
8.4 7.2
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4802DY Si4802DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 8.4 6.7 20 2.1 2.5 1.6
Steady State
Unit
6.1 4.9 A
1.1 1.3 0.8
- 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71114 S-31989- Rev. C, 13-Oct-03 .vishay. t v 10 sec...
