Si4800BDY
FEATURES
- Halogen-free According to IEC 61249-2-21 Available
- Trench FET® Power MOSFET
- High-Efficient PWM Optimized
- 100 % UIS and Rg Tested
SO-8
S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a, b Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.1 m H TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 2.5 1.6
- 55 to 150 2.3 15 11.25 1.3 0.8 m J W °C 9 7.0 40 10 s 30 ± 25 6.5 5.0 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Limits Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot...
