SI4800
Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology.
1.2 Features s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching.
1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook puters s DC-to-DC converters.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8
Pinning
- SOT96-1 (SO-8), simplified outline and symbol
Description
Simplified outline source (s) gate (g)
85 drain (d)
1 Top view
MBK187
SOT96-1 (SO8)
Symbol d g
MBB076 s
Philips Semiconductors
N-channel Trench MOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
SO8 plastic small outline package; 8 leads
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol...
