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GT5G134 Silicon N-Channel IGBT

GT5G134 Description

Discrete IGBTs Silicon N-Channel IGBT GT5G134 1.Applications * Dedicated to Photo-Flash Intensity Control Applications * Dedicated to.

GT5G134 Features

* (1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ. ) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package 3. Packaging and Internal Circuit GT5G134 SOP

GT5G134 Applications

* Dedicated to Photo-Flash Intensity Control Applications

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Silicon N-Channel IGBT Toshiba
Toshiba GT5G134-like datasheet