Datasheet Specifications
- Part number
- GT5G134
- Manufacturer
- Toshiba ↗
- File Size
- 237.92 KB
- Datasheet
- GT5G134-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT5G134 1.Applications * Dedicated to Photo-Flash Intensity Control Applications * Dedicated to.Features
* (1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ. ) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package 3. Packaging and Internal Circuit GT5G134 SOPApplications
* Dedicated to Photo-Flash Intensity Control ApplicationsGT5G134 Distributors
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