GT5G102 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High.

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Datasheet Specifications

Part number: GT5G102
Manufacturer: Toshiba ↗ Semiconductor
File Size: 77.08 KB
Datasheet: GT5G102-ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A)
* Enhancement-mode 12 V gate drive
* Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissi

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GT5G102 Silicon N-Channel IGBT Toshiba Semiconductor

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