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GT5G131 Silicon N-Channel IGBT

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Description

GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm * * *

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Applications

* Unit: mm
* 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Maximum R

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GT5G131 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT5G131-like datasheet
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