Datasheet4U Logo Datasheet4U.com

GT5G133 Silicon N-Channel IGBT

GT5G133 Description

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications * Enhancement-mode * Lo.

GT5G133 Applications

* Enhancement-mode
* Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A)
* Peak collector current: IC = 130 A (max)
* Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VC

📥 Download Datasheet

Preview of GT5G133 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GT5G134 - Silicon N-Channel IGBT (Toshiba)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50J341 - Silicon N-Channel IGBT (Toshiba)
  • GT50J342 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR21 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR22 - Silicon N-Channel IGBT (Toshiba)

📌 All Tags

Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT5G133-like datasheet