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GT5G133 Silicon N-Channel IGBT

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Description

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications * Enhancement-mode * Lo.

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Applications

* Enhancement-mode
* Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A)
* Peak collector current: IC = 130 A (max)
* Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VC

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GT5G133 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT5G133-like datasheet
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