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SVGP20500NL5 - 200V N-CHANNEL MOSFET

This page provides the datasheet information for the SVGP20500NL5, a member of the SVGP20500NL5-SilanMicroelectronics 200V N-CHANNEL MOSFET family.

Description

SVGP20500NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 24A, 200V, RDS(on)(typ. )=42m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant PDFN-8-5X6X0.95-1.27 KEY.

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Datasheet preview – SVGP20500NL5

Datasheet Details

Part number SVGP20500NL5
Manufacturer Silan Microelectronics
File Size 392.82 KB
Description 200V N-CHANNEL MOSFET
Datasheet download datasheet SVGP20500NL5 Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVGP20500NL5_Datasheet 24A, 200V N-CHANNEL MOSFET DESCRIPTION SVGP20500NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. S1 S2 S3 G4 8D 7D 6D 5D FEATURES  24A, 200V, RDS(on)(typ.)=42m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 200 2.0~4.
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