Datasheet Specifications
- Part number
- HFU2N90
- Manufacturer
- SemiHow
- File Size
- 249.33 KB
- Datasheet
- HFU2N90-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD2N90_HFU2N90 Feb 2014 HFD2N90/HFU2N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 2.0 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TesteHFU2N90 Distributors
📁 Related Datasheet
📌 All Tags