HFU2N60U - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ = 4 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N60U 1 2 3 HFU2N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Param.

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Published: Apr 14, 2017 |