HFU2N60S - 600V N-Channel MOSFET

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Datasheet Details

Originative New Design.
Superior Avalanche Rugged Technology.
Robust Gate Oxide Technology.
Very Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Unrivalled Gate Charge : 6.0 nC (Typ. ).
Extended Safe Operating Area.
Lower RDS(ON) ȍ7S#9GS=10V.
100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VD.

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Published: Jun 7, 2015 |