HFU2N60S 600V N-Channel MOSFET

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Description

HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A .

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Datasheet Specifications

Part number: HFU2N60S
Manufacturer: SemiHow
File Size: 164.30 KB
Datasheet: HFU2N60S-SemiHow.pdf
Description: 600V N-Channel MOSFET

Features

* Originative New Design
* Superior Avalanche Rugged Technology
* Robust Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge : 6.0 nC (Typ. )
* Extended Safe Operating Area
* Lower RDS(ON) ȍ7S

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HFU2N60S 600V N-Channel MOSFET SemiHow

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