Datasheet Specifications
- Part number
- HFU2N65F
- Manufacturer
- SemiHow
- File Size
- 210.57 KB
- Datasheet
- HFU2N65F-SemiHow.pdf
- Description
- 600V N-Channel MOSFET
Description
HFD2N65F_HFU2N65F July 2015 HFD2N65F / HFU2N65F 600V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 2 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFU2N65F Distributors
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