Datasheet Specifications
- Part number
- HFU2N65
- Manufacturer
- SemiHow
- File Size
- 340.02 KB
- Datasheet
- HFU2N65-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFU2N65 Nov 2008 HFU2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.6 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4.5 Ω (Typ. ) @VGS=10V 100% Avalanche TestHFU2N65 Distributors
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