Datasheet Specifications
- Part number
- HFU2N60
- Manufacturer
- SemiHow
- File Size
- 158.96 KB
- Datasheet
- HFU2N60-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD2N60_HFU2N60 July 2005 HFD2N60 / HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFU2N60 Distributors
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