Datasheet Specifications
- Part number
- HFU2N65S
- Manufacturer
- SemiHow
- File Size
- 260.56 KB
- Datasheet
- HFU2N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ. ) @VGS=10V 100% Avalanche TestHFU2N65S Distributors
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