Datasheet4U Logo Datasheet4U.com

SW20N60 - N-channel Power MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness MOSFET.
  • RDS(ON) (Max 0.3Ω)@VGS=10V.
  • Gate Charge (Max 80 nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A.
  • RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SW20N60
Manufacturer SAMWIN
File Size 815.83 KB
Description N-channel Power MOSFET
Datasheet download datasheet SW20N60 Datasheet

📁 Similar Datasheet

  • SW20N60U - MOSFET (SEMIPOWER)
  • SW20N65K - MOSFET (SEMIPOWER)
  • SW20N65K2 - N-channel Enhanced mode TO-220F MOSFET (SEMIPOWER)
  • SW20N50D - N-channel MOSFET (Seawon)
  • SW20N50U - MOSFET (SEMIPOWER)
  • SW201 - Quad SPST JFET Analog Switches (Analog Devices)
  • SW201 - Quad SPST JFET Analog Switches (Precision Monolithics)
  • SW201 - GaAs SPDT Switch DC-2 Ghz (MA-Com)
  • SW20CXC950 - GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER (PST)
  • SW210N04 - MOSFET (SEMIPOWER)
Other Datasheets by SAMWIN
  • SW20N50 - N-channel Power MOSFET
  • SW226N - N-Channel MOSFET
  • SW22N65D - N-channel MOSFET
  • SW2601A - Primary control high precision constant voltage / constant current PWM controller
  • SW2603 - High Performance Current Mode PWM Switching Power Supply Controller
  • SW2604 - High Performance Current Mode PWM Switching Power Supply Controller
  • SW2604A - High Performance Current Mode PWM switching power supply controller
  • SW2658A - Green Power Current Mode PWM switching power supply controller

Full PDF Text Transcription

Click to expand full text
SAMWIN SW20N60 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A* RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.
Published: |