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H5N5005PL Silicon N-Channel MOS FET

H5N5005PL Description

H5N5005PL Silicon N Channel MOS FET High Speed Power Switching .

H5N5005PL Features

* Low on-resistance: RDS(on) = 0.070 Ω typ.
* Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
* High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)
* Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
* Av

H5N5005PL Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel MOS FET Renesas
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