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H5N2005DL - MOSFET

Features

  • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C).
  • Low drive power.
  • High speed switching Outline.

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Full PDF Text Transcription (Reference)

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H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07, 2012 Features  Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power  High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
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