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H5N2005DS - Silicon N Channel MOS FET High Speed Power Switching

This page provides the datasheet information for the H5N2005DS, a member of the H5N2005DL Silicon N Channel MOS FET High Speed Power Switching family.

Datasheet Summary

Features

  • Low on-resistance www. DataSheet4U. com.
  • Low drive current.
  • High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation www. DataSheet4U. com Symbol VDSS VGSS ID ID N.

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Datasheet Details

Part number H5N2005DS
Manufacturer Hitachi Semiconductor
File Size 89.02 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2005DS Datasheet
Additional preview pages of the H5N2005DS datasheet.

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  • H5N2004DS - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • H5N2007FN - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
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Other Datasheets by Hitachi Semiconductor
  • H5N2005DL - Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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