H5N2003P - Silicon N Channel MOS FET High Speed Power Switching
Datasheet Summary
Features
Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Note.
H5N2001LD- Silicon N Channel MOS FET High Speed Power Switching
H5N2001LM- Silicon N Channel MOS FET High Speed Power Switching
H5N2001LS- Silicon N Channel MOS FET High Speed Power Switching
H5N2004DL- Silicon N Channel MOS FET High Speed Power Switching
H5N2004DS- Silicon N Channel MOS FET High Speed Power Switching
H5N2007FN- Silicon N Channel MOS FET High Speed Power Switching
H5N2008P- Silicon N Channel MOS FET High Speed Power Switching
H5N2305PF- Silicon N Channel MOSFET High Speed Power Switching
Full PDF Text Transcription
Click to expand full text
H5N2003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0235-0100Z Rev.1.00 Apr.09.2004
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Pch Note2 θch-c Tch Tstg
Note3
Ratings 200 ±30 60 240 60 240 40 150 0.
H5N2003P Datasheet
