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H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching

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Features

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  • Low.
  • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V).
  • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A).
  • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A).
  • Avalanche ratings Outline.

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Datasheet Details

Part number H5N2004DL
Manufacturer Renesas Technology
File Size 126.44 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2004DL Datasheet
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H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.
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