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H5N2005DL, H5N2005DS
200V - 6A - MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0796EJ0400 (Previous: REJ03G1104-0300)
Rev.4.00 Jun 07, 2012
Features
Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
Low drive power High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) )
D 4
123
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
H5N2005DL Datasheet
