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H5N5016PL-E0-E - MOSFET

Features

  • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching.
  • Built-in fast recovery diode.
  • Quality grade: Standard Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching • Built-in fast recovery diode • Quality grade: Standard Outline RENESAS Package code: PRSS0003ZN-A, PRSS0003ZC-A (Package name:TO-264A, TO-264) D Datasheet R07DS1200EJ0200 Rev.2.00 Nov.4.2021 1 23 G S 1. Gate 2. Drain 3.
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