Datasheet4U Logo Datasheet4U.com

H5N5016PL-E0-E MOSFET

H5N5016PL-E0-E Description

H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching .

H5N5016PL-E0-E Features

* Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching
* Built-in fast recovery diode
* Quality grade: Standard Outline RENESAS Package code: PRSS0003ZN-A, PRSS0003ZC-A (Package name:TO-264

📥 Download Datasheet

Preview of H5N5016PL-E0-E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • H5N5016PL - Silicon N-Channel MOSFET (Renesas Technology)
  • H5N5012P - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • H5N5015P - Silicon N-Channel MOSFET (Hitachi)
  • H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
  • H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
  • H5N5005PL - Silicon N-Channel MOSFET (Hitachi)
  • H5N5006FM - Silicon N-Channel MOSFET (Hitachi)
  • H5N5006LD - (H5N5006xx) Silicon N-Channel MOSFET (Hitachi)

📌 All Tags

Renesas H5N5016PL-E0-E-like datasheet