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H5N5012P - Silicon N Channel MOS FET High Speed Power Switching

Datasheet Summary

Features

  • Low on-resistance.
  • Low leakage current www. DataSheet4U. com.
  • High speed switching.
  • Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.

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Datasheet Details

Part number H5N5012P
Manufacturer Renesas Technology
File Size 85.75 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N5012P Datasheet
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H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAPNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 500 ±30 25 100 25 7 150 0.
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