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H5N5001FM Silicon N-Channel MOSFET

H5N5001FM Description

H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st.Edition Mar.2001 .

H5N5001FM Features

* Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 1

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Datasheet Details

Part number
H5N5001FM
Manufacturer
Hitachi
File Size
73.31 KB
Datasheet
H5N5001FM_Hitachi.pdf
Description
Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET Hitachi
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