Datasheet4U Logo Datasheet4U.com

H5N5006FM Silicon N-Channel MOSFET

H5N5006FM Description

H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st.Edition Mar.2001 .

H5N5006FM Features

* Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanc

📥 Download Datasheet

Preview of H5N5006FM PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
H5N5006FM
Manufacturer
Hitachi
File Size
75.57 KB
Datasheet
H5N5006FM_Hitachi.pdf
Description
Silicon N-Channel MOSFET

📁 Related Datasheet

  • H5N5007P - Silicon N-Channel MOSFET (Renesas)
  • H5N5012P - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • H5N5015P - Silicon N-Channel MOSFET (Renesas)
  • H5N5016PL - Silicon N-Channel MOSFET (Renesas Technology)
  • H5N5016PL-E0-E - MOSFET (Renesas)
  • H5N50ADND - 500V N-Channel Planar MOSFET (ChipSourceTek)
  • H5N50ADNF - 500V N-Channel Planar MOSFET (ChipSourceTek)
  • H5N50ADNP - 500V N-Channel Planar MOSFET (ChipSourceTek)

📌 All Tags

Silicon N-Channel MOSFET Hitachi
Hitachi H5N5006FM-like datasheet