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H5N5004PL Silicon N-Channel MOSFET

H5N5004PL Description

H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st.Edition Mar.2001 .

H5N5004PL Features

* Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID =

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Datasheet Details

Part number
H5N5004PL
Manufacturer
Hitachi
File Size
52.13 KB
Datasheet
H5N5004PL_Hitachi.pdf
Description
Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET Hitachi
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