FDT86102LZ - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDT86102LZ
Manufacturer	ON Semiconductor
File Size	277.66 KB
Description	N-Channel MOSFET
Datasheet	FDT86102LZ-ONSemiconductor.pdf

FDT86102LZ Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and switching loss. S zener has been added to enhance ESD voltage level. 223 CASE 318H MARKING DIAGRAM

Features

Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A.
Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A.
HBM ESD Protection Level > 6 kV Typical (Note 4).
Very Low Qg and Qgd Compared to Competing Trench Technologies.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and RoHS Compliant AYW 102LZ 1 A Y W 102LZ = Assembly Location = Year = Work Week = Specific Device Code.

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Published: Dec 25, 2023 |