FDT1600N10ALZ - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDT1600N10ALZ
Manufacturer	Fairchild Semiconductor
File Size	748.03 KB
Description	MOSFET
Datasheet	FDT1600N10ALZ-FairchildSemiconductor.pdf

FDT1600N10ALZ Product details

Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.Symbol VDSS VGSS ID IDM EAS dv/dt Dra

Features

RDS(on) = 121 mΩ (Typ. ) @ VGS = 10 V, ID = 2.8 A.
RDS(on) = 156 mΩ (Typ. ) @ VGS = 5 V, ID = 1.8 A.
Low Gate Charge (Typ. 2.9 nC).
Low Crss (Typ. 2.04 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant.

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Published: Jan 11, 2017 |