Datasheet4U Logo Datasheet4U.com

FDT434P - P-Channel MOSFET

Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 5.5 A,.
  • 20 V. RDS(ON) = 0.050 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.070 Ω @ VGS =.
  • 2.5 V.
  • Low gate charge (13nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDT434P P-Channel MOSFET ON Semiconductor
FDT439N N-Channel MOSFET ON Semiconductor
FDT457N N-Channel MOSFET ON Semiconductor
FDT4N50NZU N-Channel MOSFET ON Semiconductor
FDT1600N10ALZ N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDT439N N-Channel MOSFET
FDT457N N-Channel MOSFET
FDT458P 30V P-Channel MOSFET
FDT459N N-Channel MOSFET
FDT461N N-Channel Logic Level PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability in a widely used surface mount package.
Published: |