FDT457N - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDT457N
Manufacturer	Fairchild Semiconductor
File Size	94.50 KB
Description	N-Channel MOSFET
Datasheet	FDT457N_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223 S G D S G SOT-223.
(J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted FDT457N 30 ±20 (Note 1a) Units V V A Gate-.

📁 FDT457N Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Mar 30, 2005 |