FDT459N - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDT459N
Manufacturer	Fairchild Semiconductor
File Size	89.39 KB
Description	N-Channel MOSFET
Datasheet	FDT459N_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted FDT459N 30 ±20 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maximum Drain Cu.

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Published: Mar 30, 2005 |