Datasheet Details
| Part number | FDT86113LZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 225.38 KB |
| Description | MOSFET |
| Datasheet |
 FDT86113LZ-FairchildSemiconductor.pdf
|
| Part number | FDT86113LZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 225.38 KB |
| Description | MOSFET |
| Datasheet |
FDT86113LZ-FairchildSemiconductor.pdf
|
Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special ta
📁 FDT86113LZ Similar Datasheet