FDT86102LZ - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDT86102LZ
Manufacturer	Fairchild Semiconductor
File Size	261.83 KB
Description	MOSFET
Datasheet	FDT86102LZ-FairchildSemiconductor.pdf

FDT86102LZ Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. DC-DC conversion Inverter Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volt

Features

Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A.
Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A.
HBM ESD protection level > 6 kV typical (Note 4).
Very low Qg and Qgd compared to competing trench technologies.
Fast switching speed.
100% UIL Tested.
RoHS Compliant General.

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Published: Jan 11, 2017 |