FDT457N - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDT457N
Manufacturer	ON Semiconductor
File Size	198.81 KB
Description	N-Channel MOSFET
Datasheet	FDT457N-ONSemiconductor.pdf

FDT457N Product details

Description

These N Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance, provide superior switching performance.

Features

5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V.
High Density Cell Design for Extremely Low RDS(ON).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
This Device is Pb.
Free.

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Published: Dec 25, 2021 |