FDT457N Datasheet (ON Semiconductor)

FDT457N, N-Channel MOSFET

These N *Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance, provide superior switching performance.

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FDT457N Features

* 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V

* High Density Cell Design for Extremely Low RDS(ON)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* This Device is Pb

* Free ABSOLUTE MAXIMUM RATING