FDT434P - P-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDT434P
Manufacturer	ON Semiconductor
File Size	226.00 KB
Description	P-Channel MOSFET
Datasheet	FDT434P-ONSemiconductor.pdf

FDT434P Product details

Description

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.Applications Low Dropout Regulator DC/DC converter Load switch Motor driving

Features

5.5 A,.
20 V. RDS(ON) = 0.050 Ω @ VGS =.
4.5 V RDS(ON) = 0.070 Ω @ VGS =.
2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package. D D SOT-22 3 S D G G D S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain.

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Published: Dec 25, 2023 |