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FDT86256 MOSFET

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Description

FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Features

* Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
* Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A

Applications

* DC-DC conversion
* Inverter
* Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limite

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