FDT86256 - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDT86256
Manufacturer	Fairchild Semiconductor
File Size	246.36 KB
Description	MOSFET
Datasheet	FDT86256-FairchildSemiconductor.pdf

FDT86256 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. Fast switching speed 100% UIL Tested RoHS Compliant Applications DC-DC conversion Inverter Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Features

Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A.
Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A.
Very low Qg and Qgd compared to competing trench technologies August 2011 General.

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Published: Jan 11, 2017 |