FDT439N Datasheet (ON Semiconductor)

FDT439N, N-Channel MOSFET

This N *Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance and provide superior switching performance.

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FDT439N Features

* 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V

* Fast switching speed.

* High power and current handling capability in a widely used surface mount package.

* This Device is Pb

* Free Applications

* DC/DC Converter