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MOSFET – Advanced Small-Signal
2N7000BU / 2N7000TA
Description These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
2N7000TU Datasheet
