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BLF547 - UHF push-pull power MOS transistor

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.
  • Designed for broadband operation.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
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