Datasheet4U Logo Datasheet4U.com

BLF548 - UHF push-pull power MOS transistor

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.
  • Designed for broadband operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF571 Power LDMOS transistor Ampleon
BLF571 HF / VHF power LDMOS transistor NXP Semiconductors
BLF573 Power LDMOS transistor Ampleon
BLF573 HF / VHF power LDMOS transistor NXP Semiconductors
BLF573S Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF542 UHF power MOS transistor
BLF543 UHF power MOS transistor
BLF544 UHF power MOS transistor
BLF544B UHF push-pull power MOS transistor
BLF545 UHF push-pull power MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLF548 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Published: |