NCE60P12K - P-Channel Enhancement Mode Power MOSFET

Description

The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

VDS =-60V,ID =-12A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE60P12K
Manufacturer	NCE Power Semiconductor
File Size	413.54 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE60P12K Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60P12K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.

Published: Jun 2, 2018 |