• Part: NCE60P04Y
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 345.47 KB
Download NCE60P04Y Datasheet PDF
NCE Power Semiconductor
NCE60P04Y
Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features - VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Application - Load switch - PWM application Schematic diagram Marking and pin Assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking 60P04Y Device NCE60P04Y Device Package SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current Maximum Power...