• Part: NCE60P10K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 420.22 KB
Download NCE60P10K Datasheet PDF
NCE Power Semiconductor
NCE60P10K
Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features - VDS =-60V,ID =-10A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Schematic diagram Application - Load switch - PWM application Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking NCE60P10K Device NCE60P10K Device Package TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM...