• Part: NCE60P12K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 413.54 KB
Download NCE60P12K Datasheet PDF
NCE Power Semiconductor
NCE60P12K
Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Application - High side switch for full bridge converter - DC/DC converter for LCD display Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter...